au.\*:("GUALTIERI GJ")
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EVALUATION OF ALUMINIUM GAAS SCHOTTKY BARRIERS USING NORDE'S MODIFIED CURRENT-VOLTAGE ANALYSTSSCHWARTZ GP; GUALTIERI GJ.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 265-267; BIBL. 10 REF.Article
THERMAL OXIDATION AND NATIVE OXIDE-SUBSTRATE REACTIONS ON INAS AND INXGA1-XASSCHWARTZ GP; GRIFFITHS JE; GUALTIERI GJ et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 3; PP. 213-222; BIBL. 23 REF.Article
ELEMENTAL ARSENIC IN NATIVE OXIDE FILMS ON ALXGA1-XASSCHWARTZ GP; DUTT BV; GUALTIERI GJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 52-54; BIBL. 20 REF.Article
THERMAL AND PULSED LASER EVAPORATION OF SINGLE PHASE ASXP1-X ALLOYSSCHWARTZ GP; BONDYBEY VE; ENGLISH JH et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 952-954; BIBL. 13 REF.Article
CONDENSED PHASE DIAGRAM FOR THE IN-AS-O SYSTEMSCHWARTZ GP; SUNDER WA; GRIFFITHS JE et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 3; PP. 205-212; BIBL. 18 REF.Article
RAMAN SCATTERING FROM ANODIC OXIDE-GAAS INTERFACESSCHWARTZ GP; SCHWARTZ B; DISTEFANO D et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 205-207; BIBL. 25 REF.Article
OPTICAL PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EVASPNES DE; SCHWARTZ GP; GUALTIERI GJ et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 590-597; BIBL. 51 REF.Article
ARSENIC INCORPORATION IN NATURE OXIDES OF GAAS GROWN THERMALLY UNDER ARSENIC TRIOXIDE VAPORSCHWARTZ GP; GRIFFITHS JE; DISTEFANO D et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 742-744; BIBL. 17 REF.Article
THE MORPHOLOGY AND CORROSION RESISTANCE OF A CONDUCTIVE SILVER-EPOXY PASTEFRANEY JP; GRAEDEL TE; GUALTIERI GJ et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 9; PP. 2360-2368; BIBL. 17 REF.Article
